福爾摩沙應用工程

Boron Nitride Solutions • Custom coatings • Material supply • BATTERY • 2D materials eshop

Thin Film Coatings & 2D Materials

Hexagonal boron nitride (hBN) is available in two forms: bulk films produced by plasma deposition and 2D films grown on Cu foil. We also offer amorphous boron nitride (a-BN) and diamond-like carbon (DLC) coatings, alongside graphene and few-layer MoS₂ for industrial research and product development.

Core competencies

hBN • a-BN • DLC • Graphene • MoS₂

Thin film deposition • 2D material transfer and integration • Material analysis

Explore materialsMake an enquiry
Optical micrograph from the supplied material images
Defined material specificationsThickness, layer count, substrate and useful area agreed for each order.
Substrates selected for your applicationAs-grown materials, transferred films and custom coating projects.

Material catalogue

Choose the material. Choose the substrate.

From films on copper to few-layer MoS₂ on SiO₂ or sapphire, select the format that fits your experiment or development programme.

hBN

  • Nominal thickness: approximately 2 nm or 8–10 nm
  • Growth substrate: Cu foil
  • Cu substrate sizes up to 4 × 4 cm
  • Film coverage on Cu: ≥90% of the specified usable area, estimated by image analysis of representative inspection regions.
  • Film specifications confirmed in the quotation
  • Transfer available on enquiry

Graphene

  • Monolayer or few-layer
  • Growth substrate: Cu foil
  • Cu substrate sizes up to 4 × 4 cm
  • Film coverage on Cu: ≥90% of the specified usable area, estimated by image analysis of representative inspection regions.
  • Layer distribution and coverage confirmed in the quotation

Few-layer MoS₂

Molybdenum disulfide for materials and device research, supplied as-grown or transferred.

  • Direct growth on Si/SiO₂ or sapphire
  • MoS₂ transfer available, including sapphire-grown films transferred to Si/SiO₂
  • 1 × 1 cm reference samples; 2 × 2 cm assessed on enquiry
  • Conformal coverage over a 500 × 500 µm area; layer range and coverage specified for each order
  • hBN and a-BN coatings on few-layer MoS₂ are available on enquiry

The 4 × 4 cm maximum applies to Cu-supported hBN and graphene. Coating and transferred-film dimensions are assessed separately.

Custom coating services

Functional thin films on industry-relevant substrates.

Nominal PECVD BN coatings up to 100 nm thick are NT$25,000. Coating with XPS, Raman, AFM and XRD characterization is NT$100,000. For GaN, SiC or Ga₂O₃, customers must provide their own substrates. Max. sample size 4 × 4 cm.

Hexagonal boron nitride

hBN coatings on sapphire, Si/SiO₂, SiC and Ga₂O₃. Coatings on Si and few-layer MoS₂ are assessed on enquiry.

  • Growth temperature depends on the substrate; see the comparison below
  • Raman spectroscopy is used to confirm hBN
Please enquire for further details.

Amorphous boron nitride

a-BN coatings on sapphire, Si/SiO₂, SiC, GaN and Ga₂O₃. Coatings on Si and few-layer MoS₂ are assessed on enquiry.

  • GaN, SiC and Ga₂O₃ substrates must be supplied by the customer for PECVD BN coating.
  • Preparation, thickness and acceptance criteria defined in the quotation
Please enquire for further details.

Diamond-like carbon

Please enquire about DLC coating products, services and quotations.

  • Substrate preparation and adhesion approach agreed for the application
  • Coating thickness and testing requirements quoted per project
Please enquire for further details

PECVD BN deposition by substrate

BN growth temperature by substrate

Select the film structure to suit your substrate and thermal budget. Growth temperatures are shown in °C.

SubstrateAmorphous BN (a-BN)Hexagonal BN (hBN)
Sapphire< 700 °C> 900 °C
GaN400 °CNot offered
Ga₂O₃< 600 °C750 °C
Si/SiO₂< 600 °C> 1000 °C
SiC< 600 °C> 1000 °C

Raman spectroscopy is used to confirm hBN. On GaN, a-BN is offered at 400 °C; hBN is not currently offered.

These temperatures apply to direct BN deposition on the listed substrates. Growth conditions for bare Si and few-layer MoS₂ are confirmed on enquiry.

hBN 4.1 eV emitter on Si/SiO₂

hBN 4.1 eV emitter supplied on a Si/SiO₂ substrate. Sample size: 4 × 4 cm only.

4.1 eV emission confirmed by cathodoluminescence measurements at 300 K and 10 K. See data.

NT$25,000 · per 4 × 4 cm sample

Enquire for detailsEnquire about this material

PECVD BN on substrate + material characterization

Nominal PECVD BN coating up to 100 nm thick on Si, Si/SiO₂, sapphire, SiC, GaN or Ga₂O₃, including XPS, Raman, AFM and XRD characterization. Film structure and growth temperature depend on the substrate, as shown in the table. GaN: a-BN only, at 400 °C. Max. sample size 4 × 4 cm.

NT$100,000 · coating + material characterization

GaN, SiC and Ga₂O₃ substrates must be supplied by the customer.

Make an enquiryEnquire about this material

BN PECVD on substrate + material characterization + HRTEM

Nominal PECVD BN coating up to 100 nm thick on Si, Si/SiO₂, sapphire, SiC, GaN or Ga₂O₃, including XPS, Raman, AFM, XRD and HRTEM. Film structure and growth temperature depend on the substrate, as shown in the table. GaN: a-BN only, at 400 °C. Max. sample size 4 × 4 cm.

NT$130,000 · coating + material characterization + HRTEM

GaN, SiC and Ga₂O₃ substrates must be supplied by the customer.

Make an enquiryEnquire about this material

Material micrographs

See the films and their interfaces.

Electron micrographs of hBN, amorphous BN and MoS₂ films, with sample descriptions from the supplied images.

Polycrystalline hBN

Polycrystalline hBN on Si/SiO₂, deposited by PECVD.

Transferred crystalline hBN

Highly crystalline hBN on Si/SiO₂ after PMMA transfer; the initial Cu substrate has been removed.

Amorphous BN on GaN

Amorphous BN on GaN, deposited by PECVD.

PECVD Polycrystalline BN on 4H-SiC, amorphous BN also available

PECVD hBN on Ga₂O₃

hBN deposited on Ga₂O₃ by PECVD. Scale bar: 10 nm.

MoS₂ directly grown on Si/SiO₂

Electron micrograph of MoS₂ grown directly on Si/SiO₂. Scale bar: 10 nm.

Select an image to view it at a larger size. Thickness annotations describe the pictured samples; product specifications are agreed separately.

Material advantages

Why BN and DLC?

Engineer the surface properties your application needs. BN offers opportunities for electrical insulation and interface control; DLC offers hard, low-friction protection for demanding surfaces.

hBN: insulation & interface protection

Hexagonal boron nitride combines electrical insulation with a layered structure suited to 2D-material interfaces.

  • Electrical isolation and dielectric layers for electronic structures
  • Encapsulation of graphene and other sensitive 2D materials
  • Heat-spreading and protective-barrier development, with performance assessed for film structure and interfaces

a-BN: dielectric & barrier development

Amorphous boron nitride offers a distinct route to insulating thin films for semiconductor integration research.

  • Low-dielectric-constant film development for interconnect insulation
  • Metal-diffusion barrier research for selected material stacks
  • Dielectric properties specified and measured for the deposited film

DLC: wear resistance & low friction

Diamond-like carbon strengthens the working surface of a component through a hard protective coating.

  • Wear and abrasion protection for contacting surfaces
  • Reduced sliding friction for mechanical parts and tooling
  • Protective surface engineering, including selected infrared-optics applications

Match the coating to the component

We select BN or DLC, film thickness and the PECVD or RF magnetron sputtering route around your substrate, process temperature and operating conditions. Adhesion, film quality and the properties that matter to your application are agreed in the project specification.

Industry applications

Coatings selected for the job they need to do.

Explore BN and DLC coatings for electrical isolation, thermal management, wear control and protective surfaces. These are application-development opportunities; the coating and acceptance criteria are defined for your component and operating conditions.

Semiconductor electronics

BN coatings for dielectric layers, electrical isolation and surface-passivation development.

  • Examples: transistor and sensor dielectric stacks
  • a-BN: low-k interconnect insulation and diffusion-barrier studies

Packaging & power electronics

hBN coatings for electrically insulating surfaces and heat-spreading evaluation.

  • Examples: package carriers, ceramic substrates and metal heat-spreader surfaces
  • Thermal performance evaluated for film orientation, thickness and interfaces

Sensors & 2D electronics

BN dielectric and encapsulation films for sensitive material and device interfaces.

  • Examples: insulation layers for graphene and MoS₂ sensors
  • Film continuity, leakage and interface quality specified for the application

Automotive & precision machinery

DLC coatings for friction reduction and wear-control development on contacting surfaces.

  • Examples: sliding parts, bearing surfaces, pump components and valve parts
  • Adhesion, load, lubricant and counterface considered in coating selection

Moulds & manufacturing tools

DLC coatings for wear resistance, lower sliding friction and release-performance evaluation.

  • Examples: polymer mould inserts, ejector components and precision tooling
  • Surface finish and coating thickness matched to component tolerances

Chemical-process equipment

hBN protective-barrier studies and DLC wear-protection projects for selected equipment surfaces.

  • Examples: metal test coupons, pump shafts, valve parts and sliding seals
  • Barrier integrity and chemical compatibility evaluated in the intended environment

Infrared optics & aerospace

DLC protective coatings for infrared-window and sensor-optics development.

  • Examples: silicon or germanium infrared windows
  • Wavelength, transmission, surface quality and adhesion agreed before coating

Medical instrument development

DLC surface coatings for wear, friction and anti-glare evaluation on instrument components.

  • Examples: reusable instrument components and precision sliding parts
  • Cleaning, sterilisation and intended-use qualification defined by the project

Coating performance is established for the agreed film and substrate. hBN heat-spreading behaviour, a-BN dielectric properties and DLC hardness, friction and durability are assessed through application-relevant measurements.

hBN, graphene & MoS₂ transfer

Bring the film to your substrate.

PMMA-assisted wet transfer of hBN and graphene onto Si/SiO₂ (SiO₂ on silicon) or sapphire. Routine nominal film size: 1 × 1 cm; up to 2 × 2 cm by quotation, subject to transfer-quality assessment.

MoS₂ transfer is also available, including sapphire-grown films transferred to Si/SiO₂. Receiving-substrate options, sample dimensions and transfer specifications are confirmed on enquiry.

Other receiving substrates, customer-supplied substrates and larger transfers are considered according to customer requirements and process compatibility.

Please enquire for further details.
Receiving substrateMaterial, surface finish, dimensions and handling requirements.
Film specificationhBN thickness, graphene or MoS₂ layer count, transfer area and coverage requirements.
Transfer qualityInspection criteria for tears, wrinkles and residues agreed before work begins.

Standard PMMA wet transfer

Illustrated for hBN or graphene grown on Cu foil.

PMMAhBN / GrapheneCu foilReceiving substrate
  1. 01

    Coat with PMMA

    Spin-coat and bake the PMMA support layer.

  2. 02

    Prepare the backside

    Remove any backside film before Cu etching.

  3. 03

    Etch the Cu

    Dissolve the Cu; the PMMA-supported film floats.

  4. 04

    Rinse in DI water

    Move through fresh water baths to remove etchant.

  5. 05

    Place on the substrate

    Collect on Si/SiO₂ or sapphire, then dry.

  6. 06

    Remove PMMA

    Dissolve PMMA with acetone; rinse and dry.

PMMA provides temporary support during transfer. The release step for sapphire-grown MoS₂ uses a different process.

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2D materials

Pre-launch catalogue prices are indicative. Formal quotations, orders and payments will be available only after registration is complete. Shipping, taxes and optional analysis are additional.

Reference conversion: USD 1 = TWD 32, a rounded budgeting rate set on 6 October 2026. TWD figures are indicative conversions; the final quotation confirms the currency and price.

Bank of Taiwan exchange-rate reference
Material on Cu1 × 1 cm2 × 2 cm4 × 4 cm
Monolayer grapheneUSD 60TWD 1,920Enquire about this materialUSD 110TWD 3,520Enquire about this materialUSD 153.53TWD 4,913Enquire about this material
Few-layer grapheneUSD 80TWD 2,560Enquire about this materialUSD 140TWD 4,480Enquire about this materialUSD 280TWD 8,960Enquire about this material
hBN, approximately 2 nmUSD 200TWD 6,400Enquire about this materialUSD 350TWD 11,200Enquire about this materialUSD 468.75TWD 15,000Enquire about this material
hBN, approximately 8–10 nmUSD 200TWD 6,400Enquire about this materialUSD 350TWD 11,200Enquire about this materialUSD 468.75TWD 15,000Enquire about this material

Film coverage on Cu: ≥90% of the specified usable area, estimated by image analysis of representative inspection regions.

Typical hBN and few layer graphene Raman spectrum is shown here and here.

hBN on nickel foil

Hexagonal boron nitride coatings on nickel foil, supplied for thin-film, interface and 2D materials research.

Available only at 3–5 nm thickness, in 2 × 2 cm and 4 × 4 cm sizes. Nickel foil specification and delivery time are confirmed on enquiry.

Prices per sample
Sample sizeUSDNTD
2 × 2 cmUSD 525NT$16,800Enquire about this material
4 × 4 cmUSD 703.13NT$22,500Enquire about this material

Shipping, taxes and optional analysis are additional.

Enquire about hBN-coated Ni foil

Transferred hBN & graphene — PMMA wet process

Indicative USD and TWD budgets per sample, including material supply, a standard receiving substrate, PMMA-assisted wet transfer and PMMA removal. Prices for 2 × 2 cm are subject to transfer-quality assessment and a confirmed quotation.

Material1 × 1 cm · routine size2 × 2 cm · on enquiry
Si/SiO₂SapphireSi/SiO₂Sapphire
Monolayer grapheneUSD 138TWD 4,416Enquire about this materialUSD 138TWD 4,416Enquire about this materialUSD 253TWD 8,096Enquire about this materialUSD 253TWD 8,096Enquire about this material
Few-layer grapheneUSD 184TWD 5,888Enquire about this materialUSD 184TWD 5,888Enquire about this materialUSD 322TWD 10,304Enquire about this materialUSD 322TWD 10,304Enquire about this material
hBN, approximately 2 nmUSD 460TWD 14,720Enquire about this materialUSD 460TWD 14,720Enquire about this materialUSD 805TWD 25,760Enquire about this materialUSD 805TWD 25,760Enquire about this material
hBN, approximately 8–10 nmUSD 460TWD 14,720Enquire about this materialUSD 460TWD 14,720Enquire about this materialUSD 805TWD 25,760Enquire about this materialUSD 805TWD 25,760Enquire about this material

Dimensions refer to the nominal transferred-film footprint, not a guaranteed defect-free area. Useful area, coverage, edge exclusion and acceptance criteria are agreed before transfer.

PMMA-assisted wet transfer may leave wrinkles, tears or residual polymer. Surface preparation, cleaning and any additional characterization are defined for the application.

SiO₂ thickness and receiving-substrate dimensions are confirmed in the quotation. Other substrates and transfers larger than 2 × 2 cm are considered on request and quoted separately. Shipping, taxes and optional analysis are additional.

Few-layer MoS₂ — direct growth & transferred films

Indicative USD and TWD budgets per sample. Direct-growth prices include the MoS₂ film and its growth substrate. The transferred option includes growth on sapphire, transfer to a standard Si/SiO₂ receiving substrate and removal of the transfer support.

Growth / supply format1 × 1 cm · reference sample2 × 2 cm · on enquiry
Direct growth on Si/SiO₂USD 230TWD 7,360Enquire about this materialUSD 450TWD 14,400Enquire about this material
Direct growth on sapphireUSD 260TWD 8,320Enquire about this materialUSD 500TWD 16,000Enquire about this material
Sapphire-grown → transferred to Si/SiO₂USD 598TWD 19,136Enquire about this materialUSD 1150TWD 36,800Enquire about this material

MoS₂ is conformal over a 500 × 500 µm area. The listed 1 × 1 cm and 2 × 2 cm sizes refer to nominal substrate dimensions for direct growth or nominal film footprints for transferred samples. Layer range, thickness distribution, morphology, useful area and coverage are agreed for each order.

Typical MoS₂ Raman spectrum shown here.

2 × 2 cm samples require growth or transfer-quality assessment before order acceptance. Sapphire release, transfer support, cleaning and acceptance criteria are specified for transferred MoS₂.

SiO₂ thickness, sapphire specification and included characterization are confirmed in the quotation. Other sizes or receiving substrates are considered on request. Shipping, taxes and optional analysis are additional; the reference conversion above applies.

Custom MoS₂ specifications

Request a quotation for the growth or transfer route, sample size, layer range and coverage you need.

Transferred films

hBN, graphene and MoS₂: material supply, receiving substrate and transfer service are included as agreed in your quotation.

Custom coatings

hBN and a-BN coatings on the listed semiconductor substrates or few-layer MoS₂, and custom DLC coatings, are quoted per batch or project, including preparation and agreed measurements.

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Battery applications

PECVD hBN-coated nickel mesh for battery interface and electrode surface research.

PECVD ultra-thin hBN on Ni mesh

Ultra-thin hexagonal boron nitride deposited on nickel mesh by plasma-enhanced chemical vapour deposition (PECVD), supplied as a research substrate.

Coating
hBN
Nominal thickness
3–5 nm
Substrate
Nickel mesh
Formats
Pre-cut discs or square mesh

Sizes and prices

Size / formatPrice (NTD)
12 mm diameter discNT$3,000per discEnquire about this material
14 mm diameter discNT$3,500per discEnquire about this material
16 mm diameter discNT$4,000per discEnquire about this material
25 × 25 mm square meshNT$10,000per sampleEnquire about this material

Disc prices are indicative. Mesh specification, quantity and the final price are confirmed in the quotation.

Electrochemical testing is not provided.

Mesh specification and delivery time are confirmed on enquiry. Custom dimensions are available by quotation; shipping and taxes are additional.

Enquire about hBN-coated Ni mesh

hBN on nickel foil

Hexagonal boron nitride coatings on nickel foil for battery interface and electrode surface research.

Available only at 3–5 nm thickness, in 2 × 2 cm and 4 × 4 cm sizes. Nickel foil specification and delivery time are confirmed on enquiry.

Prices per sample
Sample sizeUSDNTD
2 × 2 cmUSD 525NT$16,800Enquire about this material
4 × 4 cmUSD 703.13NT$22,500Enquire about this material

Shipping, taxes and optional analysis are additional.

Electrochemical testing is not provided.

Enquire about hBN-coated Ni foil

Quotations will be available after registration

For now, please contact us with questions or expressions of interest. No order or payment will be accepted.

Make an enquiry

Planned ordering and delivery

Our planned process after registration.

The following ordering process will become available after company registration is complete. For now, we welcome enquiries and expressions of interest only.

01

Tell us what you need

Material, thickness or layer count, substrate, size, quantity and intended use.

02

Confirm the specification

We review feasibility and agree the useful area, quality criteria and included measurements.

03

Receive your quotation

Confirm the scope, price and delivery schedule before work begins.

04

Supply & delivery

Materials or coated samples are supplied with the agreed characterization summary.

Technical expert

Experience in thin films and 2D materials.

Materials research and industrial R&D experience supporting film specification and characterization.

Niall Tumilty — 唐奈歐

Technical Expert · Semiconductor Materials & Devices

Niall Tumilty

Associate Professor · NYCU

Niall combines industrial R&D experience with research in wide-bandgap semiconductors and two-dimensional materials totaling more than 22 years. He holds a PhD from University College London and previously worked as a Principal Engineer at Teledyne-e2v.

hBN • Graphene • MoS₂ • Thin films • CVD • PVD • Material and interface analysis

University profile

Listed solely as a technical expert. Academic affiliation describes individual background and does not imply university endorsement, management responsibility, or an executive or operational role in Formosa Applied Engineering.

Material enquiries

Enquiries and expressions of interest

Company registration is in progress. Tell us about your material or coating interests and technical requirements. This form is for enquiries only; it does not place an order.

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